Ge/graded-SiGe Multiplication Layers for Low-voltage and Low-noise Ge Avalanche Photodiodes on Si

Y. Miyasaka

doi:https://doi.org/10.7567/SSDM.2015.A-4-2

16:10 〜 16:25

[A-4-2] Ge/graded-SiGe Multiplication Layers for Low-voltage and Low-noise Ge Avalanche Photodiodes on Si

^○Y. Miyasaka¹, T. Hiraki^2,3, K. Okazaki^2,3, K. Takeda^2,3, T. Tsuchizawa^2,3, K. Yamada^2,3, K. Wada¹, Y. Ishikawa¹ (1.Univ. of Tokyo, 2.NTT Device Tech. Labs., 3.NTT Nanophotonics Center(Japan))

https://doi.org/10.7567/SSDM.2015.A-4-2

2015 International Conference on Solid State Devices and Materials

[A-4-2] Ge/graded-SiGe Multiplication Layers for Low-voltage and Low-noise Ge Avalanche Photodiodes on Si