The Japan Society of Applied Physics

18:25 〜 18:40

[B-5-4] Back Gate Bias-Temperature Instability in Single-Layer Double-Gated Graphene Field-Effect Transistors

Y. Y. Illarionov1,2, M. Waltl1, A. D. Smith3, S. Vaziri3, M. Ostling3, M. Lemme4, T. Grasser1 (1.Inst. for Microelectronics (TU Wien), 2.Ioffe Physical-Technical Inst., 3.KTH Royal Inst. of Technology, 4.Univ. of Siegen(Austria))

https://doi.org/10.7567/SSDM.2015.B-5-4