17:20 〜 17:35

[D-2-5] HfS₂ Electron Double Layer Transistor with High Drain Current

^○T. Kanazawa¹, T. Amemiya^1,2, A. Ishikawa^2,3, V. Upadhyaya¹, T. Tanaka², K. Tsuruta³, Y. Miyamoto¹ (1.Tokyo Tech, 2.RIKEN, 3.Okayama Univ.(Japan))

https://doi.org/10.7567/SSDM.2015.D-2-5