Intercalation Doping with Metal Chlorides in Low-Temperature-Grown Multilayer CVD Graphene for Interconnect Applications

H. Miyazaki

doi:https://doi.org/10.7567/SSDM.2015.E-1-5

3:15 PM - 3:30 PM

[E-1-5] Intercalation Doping with Metal Chlorides in Low-Temperature-Grown Multilayer CVD Graphene for Interconnect Applications

^○H. Miyazaki^1,2, R. Matsumoto³, M. Katagiri^1,2, D. Nishide^1,4, R. Ifuku^1,4, M. Takahashi¹, Y. Yamazaki^1,2, T. Matsumoto^1,4, N. Sakuma^1,2, K. Ueno⁵, T. Sakai^1,2, A. Kajita^1,2 (1.LEAP, 2.Toshiba Corp., 3.Tokyo Polytechnic Univ., 4.Tokyo Electron Ltd., 5.Shibaura Inst. of Tech.(Japan))

https://doi.org/10.7567/SSDM.2015.E-1-5

2015 International Conference on Solid State Devices and Materials

[E-1-5] Intercalation Doping with Metal Chlorides in Low-Temperature-Grown Multilayer CVD Graphene for Interconnect Applications