The Japan Society of Applied Physics

5:05 PM - 5:25 PM

[E-2-3] Wafer Bonding of SiC-SiC and SiC-Si by Modified Suface Activated Bonding Method

F. Mu1, M. Fujino1, T. Suga1, K. Iguchi2, H. Nakazawa2, Y. Takahashi2 (1.Univ. of Tokyo, 2.Fuji Electric Co., Ltd.(Japan))

https://doi.org/10.7567/SSDM.2015.E-2-3