17:05 〜 17:25

[E-2-3] Wafer Bonding of SiC-SiC and SiC-Si by Modified Suface Activated Bonding Method

^○F. Mu¹, M. Fujino¹, T. Suga¹, K. Iguchi², H. Nakazawa², Y. Takahashi² (1.Univ. of Tokyo, 2.Fuji Electric Co., Ltd.(Japan))

https://doi.org/10.7567/SSDM.2015.E-2-3