09:20 〜 09:40

[F-6-2] Pure CMOS One-Time Programmable Memories using a Combination of Gate-Ox Anti-fuse and Poly-Si Fuse

^○M. Matsumoto¹, K. Tatsumura¹, K. Zaitsu¹, S. Yasuda¹ (1.Toshiba Corp.(Japan))

https://doi.org/10.7567/SSDM.2015.F-6-2