14:45 〜 15:00

[G-1-3] Beyond 10 μm Thick Crack-Free GaN Growth on Si for High Power Device Applications

^○A. Tanaka¹, R. Chen¹, S. A. Dayeh¹ (1.Univ. of California, San Diego(USA))

https://doi.org/10.7567/SSDM.2015.G-1-3