3:30 PM - 3:45 PM

[G-1-6] In Situ Synchrotron X-ray Diffraction Studies of Nitride Semiconductor Materials

T. Sasaki¹, ^○M. Takahasi¹ (1.Japan Atomic Energy Agency(Japan))

https://doi.org/10.7567/SSDM.2015.G-1-6