16:25 〜 16:40

[G-4-3] Low-Temperature (~150°C) Solid-Phase Epitaxy of a-GeSn/c-Ge for High Non-Equilibrium Substitutional Sn-Concentration GeSn

^○T. Sadoh¹, A. Ooato¹, J. Park¹, M. Miyao¹ (1.Kyushu Univ.(Japan))

https://doi.org/10.7567/SSDM.2015.G-4-3