The Japan Society of Applied Physics

16:40 〜 16:55

[G-4-4] Influence of Precursor Gas on SiGe Epitaxial Material Quality in Terms of Structural and Electrical Defects

S. Ike1,2,3, E. Simoen3, Y. Shimura3,4,5, A. Hikavyy3, W. Vandervorst3,4, R. Loo3, W. Takeuchi1, O. Nakatsuka1, S. Zaima1,6 (1.Graduate School of Eng., Nagoya Univ., 2.Research Fellow of JSPS, 3.Imec, 4.KU Leuven, 5.FWO Pegasus Marie Curie Fellow, 6.EcoTopia Sci. Inst., Nagoya Univ.(Japan))

https://doi.org/10.7567/SSDM.2015.G-4-4