Influence of Precursor Gas on SiGe Epitaxial Material Quality in Terms of Structural and Electrical Defects

S. Ike

doi:https://doi.org/10.7567/SSDM.2015.G-4-4

16:40 〜 16:55

[G-4-4] Influence of Precursor Gas on SiGe Epitaxial Material Quality in Terms of Structural and Electrical Defects

^○S. Ike^1,2,3, E. Simoen³, Y. Shimura^3,4,5, A. Hikavyy³, W. Vandervorst^3,4, R. Loo³, W. Takeuchi¹, O. Nakatsuka¹, S. Zaima^1,6 (1.Graduate School of Eng., Nagoya Univ., 2.Research Fellow of JSPS, 3.Imec, 4.KU Leuven, 5.FWO Pegasus Marie Curie Fellow, 6.EcoTopia Sci. Inst., Nagoya Univ.(Japan))

https://doi.org/10.7567/SSDM.2015.G-4-4

2015 International Conference on Solid State Devices and Materials

[G-4-4] Influence of Precursor Gas on SiGe Epitaxial Material Quality in Terms of Structural and Electrical Defects