The Japan Society of Applied Physics

14:00 〜 14:15

[J-1-1] Self-Aligned Formation of the Trench Bottom Shielding Region in 4H-SiC UMOSFETs

T. Kojima1,2, S. Harada1,3, Y. Kobayashi1,2, M. Sometani1,2, K. Ariyoshi1,4, J. Senzaki1,3, M. Takei1,2, Y. Tanaka1,3, H. Okumura1,3 (1.R&D Partnership for Future Power Electronics Technology, 2.Fuji Electric Co., Ltd, 3.AIST, 4.Toshiba Corp.(Japan))

https://doi.org/10.7567/SSDM.2015.J-1-1