Self-Aligned Formation of the Trench Bottom Shielding Region in 4H-SiC UMOSFETs

T. Kojima

doi:https://doi.org/10.7567/SSDM.2015.J-1-1

14:00 〜 14:15

[J-1-1] Self-Aligned Formation of the Trench Bottom Shielding Region in 4H-SiC UMOSFETs

^○T. Kojima^1,2, S. Harada^1,3, Y. Kobayashi^1,2, M. Sometani^1,2, K. Ariyoshi^1,4, J. Senzaki^1,3, M. Takei^1,2, Y. Tanaka^1,3, H. Okumura^1,3 (1.R&D Partnership for Future Power Electronics Technology, 2.Fuji Electric Co., Ltd, 3.AIST, 4.Toshiba Corp.(Japan))

https://doi.org/10.7567/SSDM.2015.J-1-1

2015 International Conference on Solid State Devices and Materials

[J-1-1] Self-Aligned Formation of the Trench Bottom Shielding Region in 4H-SiC UMOSFETs