14:15 〜 14:30

[J-1-2] Characterization of Process-Induced Defects in SiC MOSFETs by Cross-Sectional Cathodoluminescence

^○R. Sugie¹, T. Uchida¹, K. Kosaka¹, K. Matsumura¹ (1.Toray Research Center Inc.(Japan))

https://doi.org/10.7567/SSDM.2015.J-1-2