16:05 〜 16:20

[J-2-1] Al Doping of 4H-SiC by Laser Irradiation to Coated Film and Its Application to Junction Barrier Schottky Diode

^○A. Ikeda¹, R. Sumina¹, H. Ikenoue¹, T. Asano¹ (1.Kyushu Univ.(Japan))

https://doi.org/10.7567/SSDM.2015.J-2-1