16:35 〜 16:50
[J-2-3] Fabrication of Nitrogen-vacancy Centers in Diamond Power Devices for Electric-Field Sensing
○W. Naruki1, K. Tahara1, T. Iwasaki1,3, H. Kato2,3, T. Makino2,3, M. Ogura2,3, D. Takeuchi2,3, S. Yamasaki2,3, M. Hatano1,3
(1.Tokyo Tech, 2.AIST, 3.JST-CREST(Japan))
https://doi.org/10.7567/SSDM.2015.J-2-3