Origin of Low Channel Mobility and Threshold Voltage Instability of SiC-MOSFETs

H. Shiomi

doi:https://doi.org/10.7567/SSDM.2015.J-6-4

10:00 AM - 10:15 AM

[J-6-4] Origin of Low Channel Mobility and Threshold Voltage Instability of SiC-MOSFETs

^○H. Shiomi¹, H. Kitai¹, M. Tsujimura¹, Y. Kiuchi¹, D. Nakata², S. Ono², K. Kojima¹, K. Fukuda¹, K. Sakamoto¹, K. Yamasaki², H. Okumura¹ (1.AIST, 2.New Japan Radio Co., Ltd(Japan))

https://doi.org/10.7567/SSDM.2015.J-6-4

2015 International Conference on Solid State Devices and Materials

[J-6-4] Origin of Low Channel Mobility and Threshold Voltage Instability of SiC-MOSFETs