16:55 〜 17:15

[K-2-3] High Performance Low Thermal Budget Ge n- and p-MOSFETs by using Ion Implantation after Germanidation Technique

^○W. H. Chang¹, H. Ota¹, T. Maeda¹ (1.AIST(Japan))

https://doi.org/10.7567/SSDM.2015.K-2-3