Impact of Hole Shape on Program Vt Distribution in Gate-All-Around 3D Flash Memory

C. H. Cheng

doi:https://doi.org/10.7567/SSDM.2015.K-7-4

11:45 AM - 12:05 PM

[K-7-4] Impact of Hole Shape on Program Vt Distribution in Gate-All-Around 3D Flash Memory

^○C. H. Cheng¹, C. W. Lee¹, K. W. Wu¹, S. H. Ku¹, N. K. Zous¹, L. Liu¹, S. W. Huang¹, Y. W. Chang¹, I. J. Huang¹, A. Suzuki¹, T. C. Lu¹, W. P. Lu¹, ChenK. C. ¹ (1.Macronix Int'l. Co., Ltd.(Taiwan))

https://doi.org/10.7567/SSDM.2015.K-7-4

2015 International Conference on Solid State Devices and Materials

[K-7-4] Impact of Hole Shape on Program Vt Distribution in Gate-All-Around 3D Flash Memory