16:05 〜 16:35

[M-2-1] (Invited) GaN Metal-Oxide-Semiconductor HEMTs: Selected Physical Aspects and Characterization

^○M. Tapajna, D. Gregusova, J. Kuzmik (1.Institute of Electrical Engineering, Slovak Academy of Sciences(Slovakia))

https://doi.org/10.7567/SSDM.2015.M-2-1