The Japan Society of Applied Physics

09:45 〜 10:00

[M-3-3] A High Current Operation in a 1.6 kV GaN-based Trenched Junction Barrier Schottky (JBS) Diode

R. Kajitani1, H. Handa1, S. Ujita1, D. Shibata1, K. Tanaka1, M. Ogawa1, H. Ishida1, S. Tamura1, M. Ishida1, T. Ueda1 (1.Panasonic Corp.(Japan))

https://doi.org/10.7567/SSDM.2015.M-3-3