09:45 〜 10:00

[M-3-3] A High Current Operation in a 1.6 kV GaN-based Trenched Junction Barrier Schottky (JBS) Diode

^○R. Kajitani¹, H. Handa¹, S. Ujita¹, D. Shibata¹, K. Tanaka¹, M. Ogawa¹, H. Ishida¹, S. Tamura¹, M. Ishida¹, T. Ueda¹ (1.Panasonic Corp.(Japan))

https://doi.org/10.7567/SSDM.2015.M-3-3