16:25 〜 16:40

[M-4-3] Analysis of GaN-HEMT Switching Characteristics for High-Power Applications

^○T. Mizoguchi¹, T. Naka¹, Y. Tanimoto², Y. Okada², W. Saito¹, M. Miura Mattausch², H. J. Mattausch² (1.Toshiba Corp., 2.Hiroshima Univ.(Japan))

https://doi.org/10.7567/SSDM.2015.M-4-3