16:40 〜 16:55

[M-4-4] Effect of Drain Conductance in Equivalent Circuit Model for GaN GIT Bidirectional Switch

^○T. Ide¹, M. Shimizu¹, X. Q. Shen¹, T. Morita², N. Otsuka², T. Ueda² (1.AIST, 2.Panasonic Corp.(Japan))

https://doi.org/10.7567/SSDM.2015.M-4-4