18:10 〜 18:25

[M-5-3] 1.7 KV Breakdown C-H Diamond MOSFETs with High Drain Current Density

^○Y. Kitabayashi¹, T. Yamada¹, D. Xu¹, T. Saito¹, D. Matsumura¹, A. Hiraiwa¹, H. Kawarada¹ (1.Waseda Univ.(Japan))

https://doi.org/10.7567/SSDM.2015.M-5-3