First Demonstration of β-Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diode with Field Plate Edge Termination

K. Sasaki

doi:https://doi.org/10.7567/SSDM.2015.M-5-4

18:25 〜 18:40

[M-5-4] First Demonstration of β-Ga₂O₃ Schottky Barrier Diode with Field Plate Edge Termination

^○K. Sasaki^1,2, M. Higashiwaki², K. Goto¹, K. Nomura³, Q. T. Thieu³, R. Togashi³, H. Murakami³, Y. Kumagai³, B. Monemar^3,4, A. Koukitu³, A. Kuramata¹, S. Yamakoshi¹ (1.Tamura Corp., 2.NICT, 3.Tokyo Univ. of Agri. & Tech., 4.Linköping Univ.(Japan))

https://doi.org/10.7567/SSDM.2015.M-5-4

2015 International Conference on Solid State Devices and Materials

[M-5-4] First Demonstration of β-Ga2O3 Schottky Barrier Diode with Field Plate Edge Termination

[M-5-4] First Demonstration of β-Ga₂O₃ Schottky Barrier Diode with Field Plate Edge Termination