Correlation between Crystallinity and Formation of Oxygen Vacancies in IGZO - Comparison between Crystal and Amorphous Using First-Principles Calculations -<br />

T. Hiramatsu

doi:https://doi.org/10.7567/SSDM.2015.M-6-2

09:15 〜 09:30

[M-6-2] Correlation between Crystallinity and Formation of Oxygen Vacancies in IGZO - Comparison between Crystal and Amorphous Using First-Principles Calculations -

^○T. Hiramatsu¹, M. Nakashima¹, E. Kikuchi¹, N. Ishihara¹, M. Tsubuku¹, K. Dairiki¹, S. Yamazaki¹ (1.Semiconductor Energy Laboratory Co., Ltd.(Japan))

https://doi.org/10.7567/SSDM.2015.M-6-2

2015 International Conference on Solid State Devices and Materials

[M-6-2] Correlation between Crystallinity and Formation of Oxygen Vacancies in IGZO - Comparison between Crystal and Amorphous Using First-Principles Calculations -