11:30 〜 11:45

[M-7-3] Net Acceptor Type Trap Density in Semi-insulating GaN Layers

^○T. Tanaka¹, N. Ito¹, M. Akutsu¹, K. Chikamatsu¹, S. Takado¹, K. Nakahara¹ (1.ROHM Co., Ltd.(Japan))

https://doi.org/10.7567/SSDM.2015.M-7-3