The Japan Society of Applied Physics

12:00 〜 12:15

[M-7-5] The Effects of AlN Passivation Layer to Metal Work-Function and Band Alignment of Metal Oxide Semiconductor Devices

H. B. Do1, Q. H. Luc1, M. T. H. Ha1, S. H. Huynh1, Y. C. Lin1, E. Y. Chang1 (1.National Chiao Tung Univ.(Taiwan))

https://doi.org/10.7567/SSDM.2015.M-7-5