Microwave Plasma Doping: As Activation and Transport in Ge and Si

H. Miyoshi

doi:https://doi.org/10.7567/SSDM.2015.N-1-2

2:30 PM - 2:50 PM

[N-1-2] Microwave Plasma Doping: As Activation and Transport in Ge and Si

^○H. Miyoshi¹, M. Oka¹, Y. Kobayashi¹, H. Ueda¹, P. L. G. Ventzek², Y. Sugimoto¹, G. Nakamura¹, Y. Hirota¹, T. Kaitsuka¹, S. Kawakami¹ (1.Tokyo Electron Ltd., 2.Tokyo Electron America, Inc.(Japan))

https://doi.org/10.7567/SSDM.2015.N-1-2

2015 International Conference on Solid State Devices and Materials

[N-1-2] Microwave Plasma Doping: As Activation and Transport in Ge and Si