14:50 〜 15:10

[N-1-3] Formation of n⁺Poly-Ge Films with High Electron Concentration and High Electron Mobility by Flash Lamp Annealing for Poly-Ge nMOSFETs

^○M. Koike^1,3, K. Usuda^1,3, T. Mori^1,2, T. Maeda^1,2, T. Tezuka^1,3 (1.GNC, AIST, 2.AIST, 3.Toshiba Corp.(Japan))

https://doi.org/10.7567/SSDM.2015.N-1-3