The Japan Society of Applied Physics

14:50 〜 15:10

[N-1-3] Formation of n+Poly-Ge Films with High Electron Concentration and High Electron Mobility by Flash Lamp Annealing for Poly-Ge nMOSFETs

M. Koike1,3, K. Usuda1,3, T. Mori1,2, T. Maeda1,2, T. Tezuka1,3 (1.GNC, AIST, 2.AIST, 3.Toshiba Corp.(Japan))

https://doi.org/10.7567/SSDM.2015.N-1-3