Effects of Microwave Annealing on Ge pMOSFET with Hydrogen-treated Interfacial Layer

K. S. Chang Liao

doi:https://doi.org/10.7567/SSDM.2015.N-1-4

2015 International Conference on Solid State Devices and Materials

2015年9月27日〜 2015年9月30日
Sapporo Convention Center, Sapporo, Japan

15:10 〜 15:30

[N-1-4] Effects of Microwave Annealing on Ge pMOSFET with Hydrogen-treated Interfacial Layer

^○K. S. Chang Liao¹, C. C. Li¹, L. J. Liu¹, M. C. Li¹, W. F. Chi¹, T. M. Lee¹, T. H. Su¹, C. H. Fu¹, Y. J. Lee² (1.National Tsing Hua Univ., 2.National Nano Device Labs.(Taiwan))

https://doi.org/10.7567/SSDM.2015.N-1-4

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