09:50 〜 10:10

[N-3-3] Incorporated Nitrogen Behavior in Plasma-nitrided Silicon Oxides Formed by Chemical Vapor Deposition Method

^○N. Shinoda¹, H. Itokawa¹, R. Fujitsuka¹, K. Sekine¹, S. Onoue¹, J. Tonotani¹ (1.Toshiba Corp.(Japan))

https://doi.org/10.7567/SSDM.2015.N-3-3