Positive and Negative Dipole Layer Formation at High-k/SiO<sub>2</sub> Interfaces Simulated by Classical Molecular Dynamics

K. Shimura

doi:https://doi.org/10.7567/SSDM.2015.N-4-3

4:20 PM - 4:40 PM

[N-4-3] Positive and Negative Dipole Layer Formation at High-k/SiO₂ Interfaces Simulated by Classical Molecular Dynamics

^○K. Shimura¹, R. Kunugi¹, A. Ogura^2,5, S. Satoh^3,5, J. Fei⁴, K. Kita⁴, T. Watanabe^1,5 (1.Waseda univ., 2.Meiji univ., 3.Univ. of Hyogo, 4.Univ. of Tokyo, 5.JST-CREST(Japan))

https://doi.org/10.7567/SSDM.2015.N-4-3

2015 International Conference on Solid State Devices and Materials

[N-4-3] Positive and Negative Dipole Layer Formation at High-k/SiO2 Interfaces Simulated by Classical Molecular Dynamics

[N-4-3] Positive and Negative Dipole Layer Formation at High-k/SiO₂ Interfaces Simulated by Classical Molecular Dynamics