09:50 〜 10:10

[N-6-3] Chemical Trend of Isoelectronic Traps in Si Tunnel FET; First-Principles Study

^○S. Iizuka¹, T. Nakayama¹ (1.Chiba Univ.(Japan))

https://doi.org/10.7567/SSDM.2015.N-6-3