Analysis and Experimental Proof of Deterioration-free Memory Device Using CAAC-IGZO FET

M. Tsubuku

doi:https://doi.org/10.7567/SSDM.2015.O-1-4

15:10 〜 15:30

[O-1-4] Analysis and Experimental Proof of Deterioration-free Memory Device Using CAAC-IGZO FET

M. Tsubuku¹, ^○T. Takeuchi¹, K. Ohshima¹, T. Murakawa¹, M. Fujita¹, D. Shimada¹, S. Sambonsuge¹, T. Atsumi¹, M. Sakakura¹, K. Kato¹, Y. Yamamoto¹, S. Yamazaki¹ (1.Semiconductor Energy Laboratory Corp. Ltd.(Japan))

https://doi.org/10.7567/SSDM.2015.O-1-4

2015 International Conference on Solid State Devices and Materials

[O-1-4] Analysis and Experimental Proof of Deterioration-free Memory Device Using CAAC-IGZO FET