10 nm p-MTJ Array Design for Suppressing Switching Delay Induced by Interference Due to Magnetic Dipole Interaction for High Density STT-MRAM

S. Ohuchida

doi:https://doi.org/10.7567/SSDM.2015.O-5-2

17:55 〜 18:15

[O-5-2] 10 nm p-MTJ Array Design for Suppressing Switching Delay Induced by Interference Due to Magnetic Dipole Interaction for High Density STT-MRAM

^○S. Ohuchida^1,3, K. Ito², M. Muraguchi^1,2,3, T. Endoh^1,2,3 (1.Graduate School of Engineering, Tohoku Univ., 2.CIES, Tohoku Univ., 3.JST-ACCEL(Japan))

https://doi.org/10.7567/SSDM.2015.O-5-2

2015 International Conference on Solid State Devices and Materials

[O-5-2] 10 nm p-MTJ Array Design for Suppressing Switching Delay Induced by Interference Due to Magnetic Dipole Interaction for High Density STT-MRAM