Universal Damage Recovery Scheme using the Oxygen Showering Post-treatment (OSP) Process for Sub-20nm High Density STT-MRAM Devices

J. H. Jeong

doi:https://doi.org/10.7567/SSDM.2015.O-5-3

18:15 〜 18:35

[O-5-3] Universal Damage Recovery Scheme using the Oxygen Showering Post-treatment (OSP) Process for Sub-20nm High Density STT-MRAM Devices

^○J. H. Jeong^{1, 2}, T. Endoh^{1, 3, 4} (1.Graduate School of Engineering, Tohoku Univ., 2.Samsung Electronics Co., Ltd., 3.CIES, Tohoku Univ., 4.JST-ACCEL, Tohoku Univ.(Japan))

https://doi.org/10.7567/SSDM.2015.O-5-3

2015 International Conference on Solid State Devices and Materials

[O-5-3] Universal Damage Recovery Scheme using the Oxygen Showering Post-treatment (OSP) Process for Sub-20nm High Density STT-MRAM Devices