9:50 AM - 10:10 AM
[O-6-3] Improvement of Cell VT Distribution & Program Disturbance of NAND Flash Device by Using Tilt Implantation for Cell Junction Counter Doping
○D. Y. Kim1, N. K. Kim1, K. T. Lee1, H. Y. Shim1, S. K. Park1, B. K. Kim1, K. B. Lee1, H. Y. Chang1, K. O. Ahn1, J. W. Kim1
(1.SK Hynix Inc.(Korea))
https://doi.org/10.7567/SSDM.2015.O-6-3
