09:50 〜 10:10

[O-6-3] Improvement of Cell VT Distribution & Program Disturbance of NAND Flash Device by Using Tilt Implantation for Cell Junction Counter Doping

^○D. Y. Kim¹, N. K. Kim¹, K. T. Lee¹, H. Y. Shim¹, S. K. Park¹, B. K. Kim¹, K. B. Lee¹, H. Y. Chang¹, K. O. Ahn¹, J. W. Kim¹ (1.SK Hynix Inc.(Korea))

https://doi.org/10.7567/SSDM.2015.O-6-3