Impact of Ultra-high Sn Content Sn<sub>x</sub>Ge<sub>1-x</sub> Interlayer on Reducing Schottky Barrier Height at Metal/n-Ge Interface

A. Suzuki

doi:https://doi.org/10.7567/SSDM.2015.PS-1-12

[PS-1-12] Impact of Ultra-high Sn Content Sn_xGe_1-x Interlayer on Reducing Schottky Barrier Height at Metal/n-Ge Interface

^○A. Suzuki¹, O. Nakatsuka¹, S. Shibayama^1,2, M. Sakashita¹, W. Takeuchi¹, M. Kurosawa^1,3, S. Zaima^1,3 (1.Graduate School of Eng., Nagoya Univ., 2.Res. Fellow of The Japan Society for the Promotion of Sci., 3.EcoTopia Sci. Inst., Nagoya Univ.(Japan))

https://doi.org/10.7567/SSDM.2015.PS-1-12

2015 International Conference on Solid State Devices and Materials

[PS-1-12] Impact of Ultra-high Sn Content SnxGe1-x Interlayer on Reducing Schottky Barrier Height at Metal/n-Ge Interface

[PS-1-12] Impact of Ultra-high Sn Content Sn_xGe_1-x Interlayer on Reducing Schottky Barrier Height at Metal/n-Ge Interface