First-Principles Study on Hydrogen Annealing Effect in Si/SiO<sub>2</sub> Interface by Thermal Oxidation

S. Kawachi

doi:https://doi.org/10.7567/SSDM.2015.PS-1-17

2015 International Conference on Solid State Devices and Materials

Sep 27, 2015 - Sep 30, 2015
Sapporo Convention Center, Sapporo, Japan

[PS-1-17] First-Principles Study on Hydrogen Annealing Effect in Si/SiO₂ Interface by Thermal Oxidation

^○S. Kawachi¹, H. Hiroki¹, M. Araidai¹, H. Kageshima^2,4, T. Endoh^3,4, K. Shiraishi^1,4 (1.Nagoya Univ., 2.Shimane Univ., 3.Tohoku Univ., 4.JST-ACCEL(Japan))

https://doi.org/10.7567/SSDM.2015.PS-1-17

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2015 International Conference on Solid State Devices and Materials

[PS-1-17] First-Principles Study on Hydrogen Annealing Effect in Si/SiO2 Interface by Thermal Oxidation

[PS-1-17] First-Principles Study on Hydrogen Annealing Effect in Si/SiO₂ Interface by Thermal Oxidation