[PS-1-2] Impact of in situ Plasma Enhanced Atomic Layer Deposition on the Electrical Properties of HfO₂/In_0.53Ga_0.47As MOSCAPs for Low EOT and Low Interface State Densit

^○Q. H. Luc¹, H. B. Do¹, S. P. Cheng¹, J. H. Chen¹, S. H. Huynh¹, P. C. Chang¹, Y. C. Lin¹, E. Y. Chang¹ (1.National Chiao Tung Univ.(Taiwan))

https://doi.org/10.7567/SSDM.2015.PS-1-2