[PS-14-8] Charge Distribution in Termination Area of 4H-SiC Diodes Analyzed by Measuring Depletion-layer Capacitance

^○H. Matsushima¹, H. Okino¹, K. Mochizuki¹, R. Yamada¹ (1.Hitachi, Ltd. (Japan))

https://doi.org/10.7567/SSDM.2015.PS-14-8