Improving Step Coverage of PVD Barrier/Seed through Bias Power Alternation for High Aspect Ratio TSVs

S. Yang

doi:https://doi.org/10.7567/SSDM.2015.PS-2-10

[PS-2-10] Improving Step Coverage of PVD Barrier/Seed through Bias Power Alternation for High Aspect Ratio TSVs

^○S. Yang¹, W. Cheng¹, H. Wu¹, C. Song^1,2, W. Zhang^1,2 (1.National Center for Advanced Packaging Co., LTD., 2.Inst. of Microelectronics, Chinease Academy of Sci.(China))

https://doi.org/10.7567/SSDM.2015.PS-2-10

2015 International Conference on Solid State Devices and Materials

[PS-2-10] Improving Step Coverage of PVD Barrier/Seed through Bias Power Alternation for High Aspect Ratio TSVs