[PS-2-15] Preparation of High Performance SiN_X Films Deposited by Reactive Sputtering and PECVD at Low Temperatures

^○M. Sato¹, M. B. Takeyama¹, Y. Nakata², Y. Kobayashi², T. Nakamura², A. Noya¹ (1.Kitami Inst. of Tech., 2.Fujitsu Laboratories Ltd.(Japan))

https://doi.org/10.7567/SSDM.2015.PS-2-15