[PS-3-4] Trap-Assisted Tunneling Effects on Gate-Induced Drain Leakage in Silicon-Germanium Channel pFET

^○V. A. Tiwari¹, A. Scholze², R. Divakaruni², D. R. Nair¹ (1.Indian Inst. of Tech. Madras, 2.IBM Semiconductor Res. and Development Center(India))

https://doi.org/10.7567/SSDM.2015.PS-3-4