[PS-4-11] SONNOS Nonvolatile Memory Based on Ultra-Thin Body Poly-Si Junctionless Field-Effect Transistor with Excellent Retention

^○Y. R. Lin¹, W. C. Wang¹, Y. H. Lin², Y. C. Wu¹ (1.National Tsing Hua Univ., 2.National United Univ.(Taiwan))

https://doi.org/10.7567/SSDM.2015.PS-4-11